Power-Grade Gallium Nitride Wafers
for
Energy, Wireless, Defense and Industrial Technologies

SixPoint Materials, Inc. produces Gallium Nitride (GaN) crystals, a key material for energy, wireless, defense and industrial technologies, with its proprietary NEAT (Near-Equilibrium AmmonoThermal) method. SixPoint's GaN wafer "GANKIBAN" has a lower dislocation density than those produced by the conventional hydride vapor phase epitaxy (HVPE). Our power-grade GANKIBAN enables a GaN-on-GaN platform for high-power devices used in power electronics, RF devices used in wireless and defense applications, high-power laser diodes used in industrial and defense fields, and light emitting diodes (LEDs) for energy-saving solid-state lighting (SSL).

Symbol of SixPoint

TECHNOLOGY

The core technology of SixPoint Materials is its proprietary NEAT (Near Equilibrium AmmonoThermal) method to grow low-dislocation single crystalline gallium nitride (GaN). The NEAT method utilizes the same concept as the natural growth of quartz crystals in geo-thermal environment. The superior advantage of the NEAT method is its high scalability proven by the mass production of artificial quartz. The NEAT method enables low-cost production of "power-grade" GaN substrates, "GANKIBAN" for the high-power switching devices, RF devices, blue/green laser diodes, and next generation high-end light emitting diodes (LEDs). SixPoint's technology is proteced by more than hundred patents world-wide.